ZX5T951GQ Datasheet PDF (60V PNP TRANSISTOR)

ZX5T951GQ - 60V PNP TRANSISTOR

Description

This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Features

BVCEO > -60V.
IC = -5.5A High Continuous Collector Current.
ICM = -15A Peak Pulse Current.
Low Saturation Voltage VCE(sat) < -70mV @ -1A.
RSAT = 39mΩ for a Low Equivalent On-Resistance.
hFE Specified Up to -10A for a High Gain Hold Up.
Complementary NPN Type: ZX5T851GQ.
Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
Halogen- and Antimony-Free. “Green” Device (Note 3).
The ZX5T951GQ is suitable for automotive.

Datasheet Details

Part number	ZX5T951GQ
Manufacturer	DIODES
File Size	390.15 KB
Description	60V PNP TRANSISTOR
Datasheet	ZX5T951GQ Datasheet
Additional preview pages of the ZX5T951GQ datasheet.

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Full PDF Text Transcription

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ZX5T951GQ Green 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Description This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features  BVCEO > -60V  IC = -5.5A High Continuous Collector Current  ICM = -15A Peak Pulse Current  Low Saturation Voltage VCE(sat) < -70mV @ -1A  RSAT = 39mΩ for a Low Equivalent On-Resistance  hFE Specified Up to -10A for a High Gain Hold Up  Complementary NPN Type: ZX5T851GQ  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen- and Antimony-Free. “Green” Device (Note 3)  The ZX5T951GQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.

Published: Jun 1, 2023 |