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DMTH6016LFDFW - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This new generation MOSFET is designed to minimize the onstate resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Power Management Functions DC-DC Converters Backlighting U-DFN2020-6 (SWP) (Type F)

Key Features

  • Rated to +175°C.
  • Ideal for High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switching.
  • Ensures More Reliable and Robust End.

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Other Datasheets by Diodes Incorporated

Part Number Description
DMTH6016LFDFWQ N-Channel MOSFET
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DMTH6016LPDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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DMTH6016LPSW N-CHANNEL ENHANCEMENT MODE MOSFET
DMTH6016LSDQ Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCED INFORMATION YM DMTH6016LFDFW 60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 18mΩ @ VGS = 10V 27.5mΩ @ VGS = 4.5V ID Max TA = +25°C 9.4A 7.6A Description This new generation MOSFET is designed to minimize the onstate resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  Power Management Functions  DC-DC Converters  Backlighting U-DFN2020-6 (SWP) (Type F) Features  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  Low RDS(ON) – Ensures On State Losses Are Minimized  0.