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DMTH10H009LFG - 100V N-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Key Features

  • Low RDS(ON).
  • Ensures On State Losses are Minimized.
  • Excellent Qgd × RDS(ON) Product (FOM).
  • Advanced Technology for DC/DC Converters.
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products.
  • Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product.
  • 100% Unclamped Inductive Switching (UIS) Test in Production Ensures More Reliable and Robust End.

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Full PDF Text Transcription for DMTH10H009LFG (Reference)

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NEW PRODUCT Green DMTH10H009LFG 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) Max 100V 8.5mΩ @ VGS = 10V 12.5mΩ @ VGS = 4.5V ID MAX TC = +25°...

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DS(ON) Max 100V 8.5mΩ @ VGS = 10V 12.5mΩ @ VGS = 4.5V ID MAX TC = +25°C 55A 45A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.