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DMT3009UFVW - 30V N-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Backlighting Power Management Functions DC-DC Converters C

Key Features

  • Ultra Low Gate Threshold Voltage.
  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Wettable Flank for Improved Optical Inspection.
  • ESD Protected Gate.
  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMT3009UFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS 30V RDS(ON) Max 11mΩ @ VGS = 10V 13mΩ @ VGS = 4.5V ID Max TC = +25°C 30A 25A Features and Benefits  Ultra Low Gate Threshold Voltage  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Wettable Flank for Improved Optical Inspection  ESD Protected Gate  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.