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DMNH6065SSD - 60V Dual N-Channel MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Rated to +175°C Ideal for High Ambient Temperature Environments 100% Uncl

Key Features

  • BVDSS 60V RDS(ON) Max 65mΩ @ VGS = 10V 88mΩ @ VGS = 4.5V ID Max TA = +25°C 3.8A 3.3A.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMNH6065SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INNEFWORPRMOADTIUOCNT Product Summary Features and Benefits BVDSS 60V RDS(ON) Max 65mΩ @ VGS = 10V 88mΩ @ VGS = 4.5V ID Max TA = +25°C 3.8A 3.3A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Rated to +175°C– Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switch (UIS) Test in Production  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.