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DMN2991UV - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage VGS(TH) < 1V.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface-Mount Package.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Other Datasheets by Diodes Incorporated

Part Number Description
DMN2991UDJ DUAL N-CHANNEL MOSFET
DMN2991UDR4 DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2991UFB4 20V N-CHANNEL MOSFET
DMN2991UFZQ 20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2991UT N-CHANNEL MOSFET
DMN2991UTQ N-CHANNEL MOSFET
DMN2990UDJ Dual N-Channel MOSFET
DMN2990UDJQ Dual N-CHANNEL MOSFET
DMN2990UFA N-Channel MOSFET
DMN2990UFB 20V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMN2991UV N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V ID @TA = +25°C 0.7A 0.6A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage VGS(TH) < 1V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface-Mount Package • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change control (i.e.