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DMN2022UCA4 - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Battery managements Load switches Battery protections Top View Featur

Key Features

  • CSP with Footprint 1.75mm × 1.75mm.
  • Height = 0.120mm (Typical) for Low Profile.
  • ESD Protection of Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMN2022UCA4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVSSS 24V RSS(ON) Min 12mΩ @ VGS = 4.5V IS Max TA = +25°C 7.8A Description This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Applications  Battery managements  Load switches  Battery protections Top View Features  CSP with Footprint 1.75mm × 1.75mm  Height = 0.120mm (Typical) for Low Profile  ESD Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.