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DMN14M8UFDF - 12V N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

General Purpose Interfacing Switch Power Management Functions U-DFN2020-6 (T

Key Features

  • 0.6mm Profile.
  • Ideal for Low-Profile.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Summary BVDSS 12V RDS(ON) Max 6.0mΩ @ VGS = 4.5V 9.0mΩ @ VGS = 2.5V ID Max TA = +25°C 14.7A 12A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  General Purpose Interfacing Switch  Power Management Functions U-DFN2020-6 (Type F) DMN14M8UFDF 12V N-CHANNEL ENHANCEMENT MODE MOSFET Features  0.6mm Profile – Ideal for Low-Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Low On-Resistance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.