DG13N50 - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

DG13N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.

The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.

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DG13N50 n-channel enhancement mode mosfet by DGME - Datasheet Preview

Datasheet Details

Part number	DG13N50
Manufacturer	DGME
File Size	731.76 KB
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	DG13N50 Datasheet

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DG13N50 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG13N50N，，，，，。，，。 DG13N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 500 13 0.