DM3400DI - 20V N-Channel Enhancement Mode MOSFET

General Description

The DM3400DI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

VDS = 20V ID =3.2A RDS(ON) < 56mΩ @ VGS=10V （Type：45mΩ）.

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DM3400DI 20v n-channel enhancement mode mosfet by DCY - Datasheet Preview

Datasheet Details

Part number	DM3400DI
Manufacturer	DCY
File Size	1.06 MB
Description	20V N-Channel Enhancement Mode MOSFET
Datasheet	DM3400DI Datasheet

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Description DM3400DI 20V N-Channel Enhancement Mode MOSFET The DM3400DI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =3.