Datasheet Details
| Part number | 2SD882 |
|---|---|
| Manufacturer | DC COMPONENTS |
| File Size | 222.33 KB |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Download | 2SD882 Download (PDF) |
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| Part number | 2SD882 |
|---|---|
| Manufacturer | DC COMPONENTS |
| File Size | 222.33 KB |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Download | 2SD882 Download (PDF) |
|
|
|
Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver.
Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current(DC) Total Power Dissipation(TC=25oC) Total Power Dissipation(TA=25oC) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC IB PD PD TJ TSTG Rating Unit 40 V 30 V 5 V 3 A 7 A 0.6 A 10 W 1 W +150 oC -55 to +150 oC TO-126 .304(7.72) .285(7.52) .041(1.05) .037(0.95) .154(3.91) .150(3.81) .105(2.66) .095(2.41) .055(1.39) .045(1.14) .152(3.86) .138(3.50) .279(7.09) .275(6.99) 1 23 3oTyp .620(15.75) .600(15.25) .052(1.32) .048(1.22) 3oTyp .032(0.81) .028(0.71) .189(4.80) .171(4.34) .022 (0.55) Typ Dimensions in inches and (millimeters) 3oTyp 3oTyp Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Collector-Base Breakdown Volatge BVCBO 40 - Collector-Emitter Breakdown Voltage BVCEO 30 - Emitter-Base Breakdown Volatge BVEBO 5 - Collector Cutoff Current ICBO - - Emitter Cutoff Current IEBO - - Collector-Emitter Saturation Voltage(1) VCE(sat) - 0.3 Base-Emitter Saturation Voltage(1) VBE(sat) - 1 DC Current Gain(1) hFE1 30 150 hFE2 100 200 Transition Frequency fT - 90 Output Capacitance Cob - 45 (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Classification of hFE2 Rank Q P E Range 100~200 160~320 250~500 Max Unit Test Conditions - V IC=100µA - V IC=1mA - V IE=10µA 1 µA VCB=30V 1 µA VEB=3V 0.5 V IC=2A, IB=0.2A 2 V IC=2A, IB=0.2A - - IC=20mA, VCE=2V 500 - IC=1A, VCE=2V - MHz IC=0.1A, VCE=5V - pF IE=0, VCB=10V, f=1MHz
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS 2SD882 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD882 | NPN Silicon Power Transistor | NEC |
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2SD882 | NPN Transistor | INCHANGE |
 |
2SD882 | NPN MEDIUM POWER TRANSISTOR | ST Microelectronics |
 |
2SD882 | MEDIUM POWER LOW VOLTAGE TRANSISTOR | UTC |
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2SD882 | NPN EPITAXIAL SILICON TRANSISTOR | JILIN SINO |
| Part Number | Description |
|---|---|
| 2SD882D | NPN Transistor |
| 2SD882S | NPN EPITAXIAL PLANAR TRANSISTOR |
| 2SD879 | NPN EPITAXIAL PLANAR TRANSISTOR |
| 2SD313 | NPN Transistor |
| 2SD667A | NPN Transistor |
| 2SD965 | NPN Transistor |