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DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2N3904
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and amplifier applications.
TO-92
Pinning
1 = Emitter 2 = Base 3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC PD TJ TSTG
Rating Unit
60
V
40
V
6
V
200
mA
625
mW
+150
oC
-55 to +150 oC
.190(4.83) .170(4.33)
.190(4.83) .170(4.33)
.500 (12.70) Min
2o Typ 2o Typ
(1.0.2570)Typ
.022(0.56) .014(0.36)
.100 (2.54)
Typ
.022(0.56) .014(0.36)
321
.148(3.76) .132(3.36)
.050 5oTyp. 5oTyp. (1.