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MTC3586BDFA6 - N- AND P-Channel Enhancement Mode MOSFET

General Description

RDSON(TYP.) 37mΩ(VGS=2.5V) 115mΩ(VGS=-2.5V) 82mΩ(VGS=1.5V) 280mΩ(VGS=-1.5V) The MTC3586BDFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN2 2-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-res

Key Features

  • Simple drive requirement.
  • Low gate charge.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTC3586BDFA6 Outline DFN2×2-6L G：Gate S：Source D：Drain Ordering Information Device Package MTC3586BDFA6-0-T1-G DFN2×2-6L (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green com.

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Datasheet Details

Part number MTC3586BDFA6
Manufacturer Cystech Electonics
File Size 423.86 KB
Description N- AND P-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTC3586BDFA6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C835DFA6 Issued Date : 2015.11.02 Revised Date : Page No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET MTC3586BDFA6 N-CH BVDSS 20V P-CH -20V ID 5A(VGS=4.5V) -3.3A(VGS=-4.5 V) 27mΩ(VGS=4.5V) 78mΩ(VGS=-4.5V) Description RDSON(TYP.) 37mΩ(VGS=2.5V) 115mΩ(VGS=-2.5V) 82mΩ(VGS=1.5V) 280mΩ(VGS=-1.5V) The MTC3586BDFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN2*2-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DFN2*2-6L package is universally preferred for all commercial-industrial surface mount applications.