MTB5D0P03J3 - P-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Key Features

Low Gate Charge.
Simple Drive Requirement.
Pb-free lead plating & halogen-free package Equivalent Circuit MTB5D0P03J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB5D0P03J3-0-T3-G Package TO-252 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13.

MTB5D0P03J3 p-channel enhancement mode power mosfet by Cystech Electonics - Datasheet Preview

Datasheet Details

Part number	MTB5D0P03J3
Manufacturer	Cystech Electonics
File Size	345.08 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	MTB5D0P03J3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C965J3 Issued Date : 2014.09.15 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB5D0P03J3 BVDSS ID @VGS=-10V RDS(ON)@VGS=-10V, ID=-25A RDS(ON)@VGS=-4.5V, ID=-10A -30V -88A 3.7mΩ(typ) 5.