MTB2D5N03BE3 - N-Channel Enhancement Mode Power MOSFET

Product Overview

Cystech Electonics

Part number	MTB2D5N03BE3
Manufacturer	Cystech Electonics
File Size	347.66 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB2D5N03BE3 Datasheet
Additional preview pages of the MTB2D5N03BE3 datasheet.

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A RDS(ON)@VGS=4.5V, ID=20A 30V 111A(Si limit) 66A(PKG limit) 17.5A 3.5 mΩ(typ) 4.6 mΩ(typ) Symbol MTB2D5N03BE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTB2D5N03BE3-0-UB-X Package TO-220 (RoHS compliant) Shippi.

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Published: Sep 4, 2016 |