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HBP1804M65 - Octuple High Voltage PNP Epitaxial Planar Transistor

Description

High breakdown voltage.

Low saturation voltage, typical VCE(sat) =-0.17V at Ic/IB =-20mA/-1mA.

Complementary to HBN1803M65 Pb-free lead plating and halogen-free package Equivalent Circuit HBP1804M65 Outline MISWB6×5-18L-A Top View Bottom Vie

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Datasheet Details

Part number HBP1804M65
Manufacturer Cystech Electonics
File Size 343.51 KB
Description Octuple High Voltage PNP Epitaxial Planar Transistor
Datasheet download datasheet HBP1804M65 Datasheet

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CYStech Electronics Corp. Octuple High Voltage PNP Epitaxial Planar Transistor HBP1804M65 Spec. No. : C619M65 Issued Date : 2015.10.28 Revised Date : Page No. : 1/7 Description • High breakdown voltage. (BVCEO=-400V) • Low saturation voltage, typical VCE(sat) =-0.17V at Ic/IB =-20mA/-1mA. • Complementary to HBN1803M65 • Pb-free lead plating and halogen-free package Equivalent Circuit HBP1804M65 Outline MISWB6×5-18L-A Top View Bottom View HBP1804M65 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C619M65 Issued Date : 2015.10.28 Revised Date : Page No. : 2/7 The following ratings and characteristics apply to each transistor in this device.
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