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CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTD1980J3
BVCEO IC RCESAT
Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2209.02.04 Page No. : 1/6
120V 4A 600mΩ
Description
The BTD1980J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application.
Equivalent Circuit
BTD1980J3 B
C
Outline
TO-252
E
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : Single Pulse Pw≦350μs, Duty≦2%.
BTD1980J3 Datasheet
