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BTC1510F3 - NPN Epitaxial Planar Transistor

Description

The BTC1510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application.

High BVCEO Low VCE(SAT) High current gain Monolithic construction with built-in base-emitter shunt resistors

Features

  • Equivalent Circuit BTC1510F3 C B R1 8k R2 120 Outline TO-263 B：Base C：Collector E：Emitter E B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note :.
  • 1. Single Pulse Pw=100ms Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits 150 150 5 10 15 2 60 150 -55~+150 Unit V V V.
  • 1 A W °C °C BTC1510F3 CYStek Produc.

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Datasheet Details

Part number BTC1510F3
Manufacturer Cystech Electonics
File Size 261.06 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTC1510F3 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com CYStech Electronics Corp. NPN Epitaxial Planar Transistor Spec. No. : C652F3 Issued Date : 2004.09.07 Revised Date : Page No. : 1/4 BTC1510F3 Description The BTC1510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. •High BVCEO •Low VCE(SAT) •High current gain •Monolithic construction with built-in base-emitter shunt resistors Features: Equivalent Circuit BTC1510F3 C B R1 8k R2 120 Outline TO-263 B：Base C：Collector E：Emitter E B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1.
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