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CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C316 Issued Date : 2005.12.21 Revised Date : 2006.03.17 Page No. : 1/9
BTC2383A3
Features
• High breakdown voltage, BVCEO≥ 200V • Large continuous collector current capability • Low collector saturation voltage • Complementary to BTA1013A3 • Pb-free package
Symbol
BTC2383A3
Outline
TO-92
B：Base C：Collector E：Emitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB Pd Tj Tstg Limits 280 200 6 1 0.
BTC2383A3 Datasheet
