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S70GL02GT - 2-Gbit (256-Mbyte) 3.0V Flash Memory

Datasheet Summary

Description

The Cypress S70GL02GT 2-Gigabit MirrorBit® Flash memory device is fabricated on 45-nm MirrorBit® Eclipse™ process technology.

This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns.

Features

  • a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded.

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Datasheet Details

Part number S70GL02GT
Manufacturer Cypress Semiconductor
File Size 673.04 KB
Description 2-Gbit (256-Mbyte) 3.0V Flash Memory
Datasheet download datasheet S70GL02GT Datasheet
Additional preview pages of the S70GL02GT datasheet.

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Full PDF Text Transcription

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S70GL02GT 2-Gbit (256-Mbyte) 3.0V Flash Memory General Description The Cypress S70GL02GT 2-Gigabit MirrorBit® Flash memory device is fabricated on 45-nm MirrorBit® Eclipse™ process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications that require higher density, better performance and lower power consumption. This document contains information for the S70GL02GT device, which is a dual-die stack of two S29GL01GT die.
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