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S70GL02GS - 2 Gbit (256 Mbyte) 3.0V Flash Memory

Datasheet Summary

Description

The Cypress S70GL02GS 2-Gigabit MirrorBit® Flash memory device is fabricated on 65 nm MirrorBit Eclipse process technology.

This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns.

Features

  • a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded.

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Datasheet Details

Part number S70GL02GS
Manufacturer Cypress Semiconductor
File Size 325.93 KB
Description 2 Gbit (256 Mbyte) 3.0V Flash Memory
Datasheet download datasheet S70GL02GS Datasheet
Additional preview pages of the S70GL02GS datasheet.

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Full PDF Text Transcription

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S70GL02GS 2 Gbit (256 MBytes), 3.0 V Flash Memory General Description The Cypress S70GL02GS 2-Gigabit MirrorBit® Flash memory device is fabricated on 65 nm MirrorBit Eclipse process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications that require higher density, better performance and lower power consumption. This document contains information for the S70GL02GS device, which is a dual die stack of two S29GL01GS die.
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