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CY7C2265KV18 - 36-Mbit QDR II+ SRAM Four-Word Burst Architecture

Download the CY7C2265KV18 datasheet PDF. This datasheet also covers the CY7C2263KV18 variant, as both devices belong to the same 36-mbit qdr ii+ sram four-word burst architecture family and are provided as variant models within a single manufacturer datasheet.

Features

  • Separate independent read and write data ports.
  • Supports concurrent transactions.
  • 550 MHz clock for high bandwidth.
  • Four-word burst for reducing address bus frequency.
  • Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz.
  • Available in 2.5 clock cycle latency.
  • Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only.
  • Echo clocks (CQ and CQ) simplify data capture in high spe.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C2263KV18-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY7C2263KV18/CY7C2265KV18 36-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features ■ Separate independent read and write data ports ❐ Supports concurrent transactions ■ 550 MHz clock for high bandwidth ■ Four-word burst for reducing address bus frequency ■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz ■ Available in 2.
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