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CY7C199 - 32K x 8 Static RAM

Download the CY7C199 datasheet PDF. This datasheet also covers the CY7 variant, as both devices belong to the same 32k x 8 static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The CY7C199 is a high-performance CMOS static RAM organized as 32,768 words by 8 bits.

Features

  • High speed.
  • 10 ns.
  • Fast tDOE.
  • CMOS for optimum speed/power.
  • Low active power.
  • 467 mW (max, 12 ns “L” version).
  • Low standby power.
  • 0.275 mW (max, “L” version).
  • 2V data retention (“L” version only).
  • Easy memory expansion with CE and OE features.
  • TTL-compatible inputs and outputs.
  • Automatic power-down when deselected is provided by an active LOW Chip Enable (CE) and active LOW Output Enable.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7-C199.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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CY7C199 32K x 8 Static RAM Features • High speed — 10 ns • Fast tDOE • CMOS for optimum speed/power • Low active power — 467 mW (max, 12 ns “L” version) • Low standby power — 0.275 mW (max, “L” version) • 2V data retention (“L” version only) • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected is provided by an active LOW Chip Enable (CE) and active LOW Output Enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 81% when deselected. The CY7C199 is in the standard 300-mil-wide DIP, SOJ, and LCC packages. An active LOW Write Enable signal (WE) controls the writing/reading operation of the memory.
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