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CY7C1526JV18 - 72-Mbit QDR-II SRAM 4-Word Burst Architecture

Download the CY7C1526JV18 datasheet PDF. This datasheet also covers the CY7C1511JV18 variant, as both devices belong to the same 72-mbit qdr-ii sram 4-word burst architecture family and are provided as variant models within a single manufacturer datasheet.

Description

The CY7C1511JV18, CY7C1526JV18, CY7C1513JV18, and CY7C1515JV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II architecture.

QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array.

Features

  • Configurations CY7C1511JV18.
  • 8M x 8 CY7C1526JV18.
  • 8M x 9 CY7C1513JV18.
  • 4M x 18 CY7C1515JV18.
  • 2M x 36 Separate independent read and write data ports.
  • Supports concurrent transactions 300 MHz clock for high bandwidth 4-word burst for reducing address bus frequency Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 600 MHz) at 300 MHz Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C1511JV18_CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Cypress (Infineon)

Part Number Description
CY7C1526AV18 72-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C1526KV18 72-Mbit QDR-II SRAM Four-Word Burst Architecture
CY7C1526V18 (CY7C15xxV18) SRAM 4-Word Burst Architecture
CY7C1520KV18 72-Mbit DDR-II SRAM Two-Word Burst Architecture
CY7C1520V18 1.8V Synchronous Pipelined SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY7C1511JV18, CY7C1526JV18 CY7C1513JV18, CY7C1515JV18 72-Mbit QDR™-II SRAM 4-Word Burst Architecture Features ■ Configurations CY7C1511JV18 – 8M x 8 CY7C1526JV18 – 8M x 9 CY7C1513JV18 – 4M x 18 CY7C1515JV18 – 2M x 36 Separate independent read and write data ports ❐ Supports concurrent transactions 300 MHz clock for high bandwidth 4-word burst for reducing address bus frequency Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 600 MHz) at 300 MHz Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches Echo clocks (CQ and CQ) simplify data capture in high speed systems Single multiplexed address input bus latches address inputs for read and
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