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CY7C1524V18 - 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture

Download the CY7C1524V18 datasheet PDF. This datasheet also covers the CY7C1522V18 variant, as both devices belong to the same 72-mbit ddr-ii sio sram 2-word burst architecture family and are provided as variant models within a single manufacturer datasheet.

Description

The CY7C1522V18, CY7C1529V18, CY7C1523V18, CY7C1524V18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II SIO (Double Data Rate Separate I/O) architecture.

The DDR-II SIO consists of two separate ports to access the memory array.

Features

  • 72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36).
  • 300-MHz clock for high bandwidth.
  • 2-Word burst for reducing address bus frequency.
  • Double Data Rate (DDR) interfaces (data transferred at 600 MHz) @ 300 MHz.
  • Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only.
  • Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches.
  • Echo clocks (CQ and CQ) simplify data captu.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C1522V18_CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Cypress (Infineon)

Part Number Description
CY7C1524AV18 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1524JV18 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1524KV18 72-Mbit DDR II SIO SRAM 2-Word Burst Architecture
CY7C1520KV18 72-Mbit DDR-II SRAM Two-Word Burst Architecture
CY7C1520V18 1.8V Synchronous Pipelined SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY7C1522V18 CY7C1529V18 CY7C1523V18 CY7C1524V18 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features • 72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36) • 300-MHz clock for high bandwidth • 2-Word burst for reducing address bus frequency • Double Data Rate (DDR) interfaces (data transferred at 600 MHz) @ 300 MHz • Two input clocks (K and K) for precise DDR timing — SRAM uses rising edges only • Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches • Echo clocks (CQ and CQ) simplify data capture in high-speed systems • Synchronous internally self-timed writes • 1.8V core power supply with HSTL inputs and outputs • Variable drive HSTL output buffers • Expanded HSTL output voltage (1.4V–VDD) • Available in 165-ball FBGA package (15 x 17 x 1.
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