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CY7C1515V18 - (CY7C15xxV18) SRAM 4-Word Burst Architecture

Download the CY7C1515V18 datasheet PDF. This datasheet also covers the CY7C1511V18 variant, as both devices belong to the same (cy7c15xxv18) sram 4-word burst architecture family and are provided as variant models within a single manufacturer datasheet.

Description

The CY7C1511V18, CY7C1526V18, CY7C1513V18, and CY7C1515V18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II architecture.

QDR-II architecture consists of two separate ports to access the memory array.

Features

  • Separate Independent Read and Write Data Ports.
  • Supports concurrent transactions.
  • 250-MHz Clock for High Bandwidth.
  • 4-Word Burst for reducing address bus frequency.
  • Double Data Rate (DDR) interfaces on both Read and Write Ports (data transferred at 500 MHz) at 250 MHz.
  • Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only.
  • Two output clocks (C and C) accounts for clock skew and flight time mismatchi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C1511V18_CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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