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CY7C1392BV18 - 1.8V Synchronous Pipelined SRAM

Features

  • 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36).
  • 300 MHz clock for high bandwidth.
  • 2-word burst for reducing address bus frequency.
  • Double Data Rate (DDR) interfaces (data transferred at 600 MHz) at 300 MHz.
  • Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only.
  • Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches.
  • Echo clocks (CQ and CQ) simplify data capture in high-speed systems.

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Full PDF Text Transcription

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CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features ■ 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 300 MHz clock for high bandwidth ■ 2-word burst for reducing address bus frequency ■ Double Data Rate (DDR) interfaces (data transferred at 600 MHz) at 300 MHz ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches ■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems ■ Synchronous internally self-timed writes ■ 1.8V core power supply with HSTL inputs and outputs ■ Variable drive HSTL output buffers ■ Expanded HSTL output voltage (1.
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