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CY7C1319BV18 - 1.8V Synchronous Pipelined SRAM

Download the CY7C1319BV18 datasheet PDF. This datasheet also covers the CY7C1317BV18 variant, as both devices belong to the same 1.8v synchronous pipelined sram family and are provided as variant models within a single manufacturer datasheet.

Description

18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36) 300-MHz clock for high bandwidth 4-Word burst for reducing address bus frequency Double Data Rate (DDR) interfaces (data transferred at 600MHz) @ 300 MHz Two input clocks (K and K) for precise DDR

Features

  • Functional.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C1317BV18-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Cypress (Infineon)

Part Number Description
CY7C1319KV18 18-Mbit DDR II SRAM Four-Word Burst Architecture
CY7C131 1K x 8 Dual-Port Static RAM
CY7C1310BV18 1.8V Synchronous Pipelined SRAM
CY7C1311AV18 (CY7C131xAV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
CY7C1311BV18 (CY7C1x1xBV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture

Full PDF Text Transcription

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CY7C1317BV18 CY7C1917BV18 CY7C1319BV18 CY7C1321BV18 18-Mbit DDR-II SRAM 4-Word Burst Architecture Features Functional Description • 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36) • 300-MHz clock for high bandwidth • 4-Word burst for reducing address bus frequency • Double Data Rate (DDR) interfaces (data transferred at 600MHz) @ 300 MHz • Two input clocks (K and K) for precise DDR timing — SRAM uses rising edges only • Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches • Echo clocks (CQ and CQ) simplify data capture in high-speed systems • Synchronous internally self-timed writes • 1.8V core power supply with HSTL inputs and outputs • Variable drive HSTL output buffers • Expanded HSTL output voltage (1.
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