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CY7C106B - 256K x 4 Static RAM

Description

The CY7C106B and CY7C1006B are high-performance CMOS static RAMs organized as 262,144 words by 4 bits.

Features

  • High speed.
  • tAA = 12 ns.
  • CMOS for optimum speed/power.
  • Low active power.
  • 495 mW.
  • Low standby power.
  • 275 mW.
  • 2.0V data retention (optional).
  • 100 µW.
  • Automatic power-down when deselected.
  • TTL-compatible inputs and outputs Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1CY7C1006B CY7C106B CY7C1006B 256K x 4 Static RAM Features • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 495 mW • Low standby power — 275 mW • 2.0V data retention (optional) — 100 µW • Automatic power-down when deselected • TTL-compatible inputs and outputs Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected. Writing to the devices is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the four I/O pins (I/O0 through I/O3) is then written into the location specified on the address pins (A0 through A17).
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