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CY7C1049 - 512K x 8 Static RAM

Description

The CY7C1049 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits.

Features

  • High speed.
  • tAA = 15 ns.
  • Low active power.
  • 1210 mW (max. ).
  • Low CMOS standby power (Commercial L version).
  • 2.75 mW (max. ).
  • 2.0V www. DataSheet4U. com Data Retention (400 µW at 2.0V retention).
  • Automatic power-down when deselected.
  • TTL-compatible inputs and outputs.
  • Easy memory expansion with CE and OE features is provided by an active LOW chip enable (CE), an active LOW output enable (OE), and three-state dri.

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Other Datasheets by Cypress (Infineon)

Part Number Description
CY7C1049 512K x 8 Static RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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049 PRELIMINARY CY7C1049 512K x 8 Static RAM Features • High speed — tAA = 15 ns • Low active power — 1210 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V www.DataSheet4U.com Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE features is provided by an active LOW chip enable (CE), an active LOW output enable (OE), and three-state drivers. Writing to the device is accomplished by taking chip enable (CE) and write enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18).
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