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CY27H512 - 64K x 8 High Speed CMOS EPROM

Description

T5K2PTcColfooo18pLhhYbwrm2ĆaeeCyp2K1qsttbiC70eheunCiH0sne,e,CY.d%e5pdMIe6da21taev0n7r2wicOvi0esHdckiiĆpciaeStasm5ehvrsg12oaaEi4eto28lgivo0slPfĆara.ĆfpDbaiRiMebWslimearnlIOeHbPaiemhn,iMlrzneiTdaahgp3oisbShiin2eegnowiOĆdlĆrdhdriepfwutPgĆeowydipasĆinn.rnIteipnmsrtdraihiyfLztoapcĆoyeUsnCkwardtcsacmaeCVt

Features

  • D CMOS for optimum speed/power D High speed Ċ tAA = 25 ns max. (commercial) Ċ tAA = 35 ns max. (military) D Low power Ċ 275 mW max. Ċ Less than 85 mW when deselected D ByteĆwide memory organization D 100% reprogrammable in the windowed package D EPROM technology D Capable of withstanding >2001V static discharge D Available in Ċ 32Ćpin PLCC Ċ 28Ćpin TSOPĆI Ċ 28Ćpin, 600Ćmil plastic or Ċ hermetic DIP 32Ćpin hermetic LCC.

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Full PDF Text Transcription

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Features D CMOS for optimum speed/power D High speed Ċ tAA = 25 ns max. (commercial) Ċ tAA = 35 ns max. (military) D Low power Ċ 275 mW max. Ċ Less than 85 mW when deselected D ByteĆwide memory organization D 100% reprogrammable in the windowed package D EPROM technology D Capable of withstanding >2001V static discharge D Available in Ċ 32Ćpin PLCC Ċ 28Ćpin TSOPĆI Ċ 28Ćpin, 600Ćmil plastic or Ċ hermetic DIP 32Ćpin hermetic LCC PRELIMINARY CY27H512 64K x 8 HighĆSpeeEdPCRMOOMS Functional Description T5K2PTcColfooo18pLhhYbwrm2ĆaeeCyp2K1qsttbiC70eheunCiH0sne,e,CY.d%e5pdMIe6da21taev0n7r2wicOvi0esHdckiiĆpciaeStasm5ehvrsg12oaaEi4eto28lgivo0slPfĆara.ĆfpDbaiRiMebWslimearnlIOeHbPaiemhn,iMlrzneiTdaahgp3oisbShiin2eegnowiOĆdlĆrdhdriepfwutPgĆeowydipasĆinn.
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