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CY14B116N - 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM

Download the CY14B116N datasheet PDF. This datasheet also covers the CY14B116L variant, as both devices belong to the same 16-mbit (2048 k x 8/1024 k x 16/512 k x 32) nvsram family and are provided as variant models within a single manufacturer datasheet.

Description

The C ypress CY14X1 16L/CY14X116N/CY14X116S i s a fast SRAM, with a no nvolatile el ement in each memory cel l.

T he memory is organized as 2048 K bytes of 8 bits each or 1024 K words of 16 bits each o r 512 K words of 32 bit s each .

Features

  • 16-Mbit nonvolatile static random access memory (nvSRAM).
  • 25-ns, 30-ns and 45-ns access times.
  • Internally organized as 2048 K × 8 (CY14X116L), 1024 K × 16 (CY14X116N), 512 K × 32 (CY14X116S).
  • Hands-off automatic STORE on power-down with only a small capacitor.
  • STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down.
  • RECALL to SRAM initiated by software or power-up.
  • High reliability.
  • Infinite read, write, and RE.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY14B116L-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Cypress (Infineon)

Part Number Description
CY14B116K 16-Mbit (2048 K x 8/1024 K x 16) nvSRAM
CY14B116L 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM
CY14B116M 16-Mbit (2048 K x 8/1024 K x 16) nvSRAM
CY14B116S 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM
CY14B101I 1-Mbit (128 K x 8) Serial (I2C) nvSRAM

Full PDF Text Transcription

Click to expand full text
PRELIMINARY CY14B116L/CY14B116N/CY14B116S CY14E116L/CY14E116N/CY14E116S 16-Mbit (2048 K × 8/1024 K × 16/512 K × 32) nvSRAM Features 16-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25-ns, 30-ns and 45-ns access times ❐ Internally organized as 2048 K × 8 (CY14X116L), 1024 K × 16 (CY14X116N), 512 K × 32 (CY14X116S) ❐ Hands-off automatic STORE on power-down with only a small capacitor ❐ STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down ❐ RECALL to SRAM initiated by software or power-up ■ High reliability ❐ Infinite read, write, and RECALL cycles ❐ 1 million STORE cycles to QuantumTrap ❐ Data retention: 20 years ■ Sleep mode operation ■ Low power consumption ❐ Active current of 75 mA at 45 ns ❐ Standby mode current of 650 A
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