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PRELIMINARY CY14B104L, CY14B104N
4-Mbit (512K x 8/256K x 16) nvSRAM
Features
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Functional Description
The Cypress CY14B104L/CY14B104N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K words of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory.
CY14B104N Datasheet
