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CMW120R080M1 - 1200V N-channel SiC MOSFET

Description

RDS(on),Typ.

Features

  • High Blocking Voltage with Low RDS(ON).
  • Fast Switching Speed with Low Capacitance.
  • Robust Design with Better Avalanche Performance.
  • Simple to Drive.

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Datasheet Details

Part number CMW120R080M1
Manufacturer CoolSemi
File Size 1.27 MB
Description 1200V N-channel SiC MOSFET
Datasheet download datasheet CMW120R080M1 Datasheet

Full PDF Text Transcription

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1. Descriptions TO-247 G DS N-Channel MOSFET CMW120R080M1 N-channel 1200V, 80mΩ typ, Coolin SiC MOS M1 Key Performance Parameters Parameters Value Unit BVDSS 1200 V RDS(on),Typ. 80 mΩ IDS@25℃ 36 A Features • High Blocking Voltage with Low RDS(ON) • Fast Switching Speed with Low Capacitance • Robust Design with Better Avalanche Performance • Simple to Drive Applications • Renewable Energy • EV Battery Chargers • High Voltage DC/DC Converters • Switch Mode Power Supplies Type/Ordering Code Package CMW120R080M1 TO-247-3 Marking CMW120R080M1 Related Links See Appendix A 1 www.coolsemi.com Rev. 1.0, 2021-06-11 1200V Coolin SiC MOS M1 CMW120R080M1 Contents 1. Descriptions .................................................................................................
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