Description
TOLL
GaN-on-Silcon E-mode Transistor
Type/Ordering Code Package
CGT65R032T1
TOLL
E-mode 650V, 25mΩ typ., GaN HEMT T1 in TOLL
Datasheet - production data
Key Performance Parameters
Parameters
Value
Unit
BVDSS
650
V
RDS(on),max
32
mΩ
Qg,typ
14
nC
IDS,max
60
A
IDS,pulse
120
A
F
Features
- 650 V enhancement mode power transistor.
- Ultra-low FOM.
- Simple gate drive requirements (0 V to 6 V).
- Transient tolerant gate drive (-20 / +10 V).
- Very high switching frequency (> 10 MHz).
- Fast and controllable fall and rise times.
- Reverse conduction capability.
- Zero reverse recovery loss.
CGT65R032T1 Datasheet
