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CSD1489 - NPN EPITAXIAL PLANAR SILICON TRANSISTOR

Description

SYMBOL VALUE BVCBO 20 Collector -Base Voltage BVCEO 16 Collector Emitter Voltage BVEBO 6.0 Emitter Base Voltage IC 2.0 Collector Current PC 0.75 Collector Power Dissipation Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise

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Datasheet Details

Part number CSD1489
Manufacturer Continental Device India Limited
File Size 92.26 KB
Description NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Datasheet download datasheet CSD1489 Datasheet

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Full PDF Text Transcription

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www.datasheet4u.com Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSD1489 TO-92 BCE Low Frequency Power Amplifier. Complementary CSB1058 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE BVCBO 20 Collector -Base Voltage BVCEO 16 Collector Emitter Voltage BVEBO 6.0 Emitter Base Voltage IC 2.0 Collector Current PC 0.
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