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NPN BUX12 HIGH CURRENT, HIGH SPEED , HIGH POWER TRANSISTOR
The BUX12 is silicon multiepitaxial planar NPN transistors in Jedec TO-3. They are intended for use in switching and linear appications in military and industrial equipment. Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO VCBO VEBO VCEX IC ICM IB Pt TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature IB = 0 IE = 0 IC = 0 VBE = -1.5V
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Unit 250 300 7.0 300 20 25 4 150 200 -65 to +200 V V V V A A A W °C °C
tp = 10ms @ TC = 25°
THERMAL CHARACTERISTICS Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case
Value
1.