The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTORS
NPN BU508DF SILICON DIFFUSED POWER TRANSISTOR
The BU508DF is a NPN epitaxial-base transistor in TO3PFa package with integrated efficiency diode. It is intended for high voltage, high-speed. Primarily for use in horizontal deflection circuits of colour television receivers. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO VCEO VEBO IC ICM IB IBM PT tJ ts
Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current Peak Base Current Base Current Peak Total Dissipation @ Tmb < 25° Junction Temperature Storage Temperature range
Value
1500 700 5 8 15 4 6 34 150 -65 to +150
Unit
V V V A A A A W °C
www.DataSheet.
BU508DF Datasheet
