CMN3100 - N-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Description

The CMN3100 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

RDS(ON).

Cmos

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Datasheet Details

Part number	CMN3100
Manufacturer	Cmos
File Size	837.80 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	CMN3100 Datasheet
Additional preview pages of the CMN3100 datasheet.

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Full PDF Text Transcription

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CMN3100 N-Channel Enhancement Mode Field Effect Transistor General Description The CMN3100 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features RDS(ON)<14mΩ @ VGS=10V RDS(ON)<16mΩ @ VGS=4.

Published: Mar 7, 2017 |