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PN4HN60-DAI-T1 - N-Channel Superjunction MOSFET

Download the PN4HN60-DAI-T1 datasheet PDF. This datasheet also covers the PN4HN60 variant, as both devices belong to the same n-channel superjunction mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies.

The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance compared to that of a conventional MOSFET.

Features

  • RDS(on) = 0.85Ω ( Typ. )@ VGS = 10V, ID = 2.8A.
  • Extremely high dv/dt capablity.
  • Very high commutation ruggedness.
  • Extremely low losses due to very low Rdson.
  • Qg.
  • Ultra low gate charge ( Typ. Qg = 15nC).
  • Low effective output capacitance.
  • 100% avalanche tested.
  • JEDEC qualified, Pb-free plating.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PN4HN60-Chipown.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PN4HN60-DAI-T1
Manufacturer Chipown
File Size 356.73 KB
Description N-Channel Superjunction MOSFET
Datasheet download datasheet PN4HN60-DAI-T1 Datasheet

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Other Datasheets by Chipown

Part Number Description
PN4HN60-DBI-T1 N-Channel Superjunction MOSFET
PN4HN60 N-Channel Superjunction MOSFET

Full PDF Text Transcription

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PN4HN60 N-Channel Superjunction MOSFET 600V, 4.5A, 0.95Ω Chipown NeoFET® General Description The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance compared to that of a conventional MOSFET. By combining the experience of the leading SJ MOSFET supplier, utilizing this advanced technology and precise process control, NeoFET provides superior switching performance and ruggedness. The NeoFET fits the PC ATX Power, Server, Telecom, Adapter, LCD and PDP TV, Lighting, UPS and industrial power applications. Features ■ RDS(on) = 0.85Ω ( Typ.)@ VGS = 10V, ID = 2.
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