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PN10HN60 - N-Channel Superjunction MOSFET

Description

The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies.

The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance compared to that of a conventional MOSFET.

Features

  • RDS(on) = 0.34Ω ( Typ. )@ VGS = 10V, ID = 5A.
  • Extremely high dv/dt capablity.
  • Very high commutation ruggedness.
  • Extremely low losses due to very low Rdson.
  • Qg.
  • Ultra low gate charge ( Typ. Qg = 25nC).
  • Low effective output capacitance.
  • 100% avalanche tested.
  • JEDEC qualified, Pb-free plating.

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Datasheet Details

Part number PN10HN60
Manufacturer Chipown
File Size 374.50 KB
Description N-Channel Superjunction MOSFET
Datasheet download datasheet PN10HN60 Datasheet

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Full PDF Text Transcription

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PN10HN60 N-Channel Superjunction MOSFET 600V, 10A, 0.38Ω Chipown NeoFET® General Description The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance compared to that of a conventional MOSFET. By combining the experience of the leading SJ MOSFET supplier, utilizing this advanced technology and precise process control, NeoFET provides superior switching performance and ruggedness. The NeoFET fits the PC ATX Power, Server, Telecom, Adapter, LCD and PDP TV, Lighting, UPS and industrial power applications. Features ■ RDS(on) = 0.34Ω ( Typ.
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