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PE60D58S - N-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the PE60D58S, a member of the PE60D58S-ChipSourceTek N-Channel Enhancement Mode Power MOSFET family.

Description

The PE60D58S uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 60V, ID = 8A RDS(ON) < 18mΩ @ VGS=10V RDS(ON) < 22mΩ @ VGS=4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet preview – PE60D58S

Datasheet Details

Part number PE60D58S
Manufacturer ChipSourceTek
File Size 1.15 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE60D58S Datasheet
Additional preview pages of the PE60D58S datasheet.

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Full PDF Text Transcription

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PE60D58S N-Channel Enhancement Mode Power MOSFET Description The PE60D58S uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V, ID = 8A RDS(ON) < 18mΩ @ VGS=10V RDS(ON) < 22mΩ @ VGS=4.
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