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MX4606 - 30V Complementary MOSFET

General Description

Ther MX4606 uses advanced trench technology to Provi deexcellent RDS(ON), low gate charge.

This device may be used to form a level shifted high side switch, and for a host of other application.

Key Features

  • N-Channel VDS = 30V,ID =6A k RDS(ON) (Typ. )20mΩ @ VGS =10V RDS(ON) (Typ. )29mΩ @ VGS =4.5V e P-Channel T VDS = -30V,ID = -5A RDS(ON)(Typ. )38mΩ @ VGS =-10V e RDS(ON)(Typ. )58mΩ @ VGS =-4.5V rc High Power and current handing capability Lead free product is acquired Surface mount package ou.

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Datasheet Details

Part number MX4606
Manufacturer ChipSourceTek
File Size 1.55 MB
Description 30V Complementary MOSFET
Datasheet download datasheet MX4606 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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30V Complementary MOSFET Description Ther MX4606 uses advanced trench technology to Provi deexcellent RDS(ON), low gate charge. This device may be used to form a level shifted high side switch, and for a host of other application. MX4606 Schematic diagram General Features N-Channel VDS = 30V,ID =6A k RDS(ON) (Typ.)20mΩ @ VGS =10V RDS(ON) (Typ.)29mΩ @ VGS =4.5V e P-Channel T VDS = -30V,ID = -5A RDS(ON)(Typ.)38mΩ @ VGS =-10V e RDS(ON)(Typ.)58mΩ @ VGS =-4.5V rc High Power and current handing capability Lead free product is acquired Surface mount package ou Application PWM applications S Load switch Power management ip Table 1.