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H5N50ADND - 500V N-Channel Planar MOSFET

Description

advanced planar stripe DMOS technology.

energy strength.

Features

  • RDSON≤1.5Ω @Vgs=10V, Id=2.5A k.
  • Ultra Low gate Charge(typical 16.5nC).
  • Low Crss (typical 7.2pF) e.
  • Fast switching capability.
  • 100% avalanche tested T.
  • Improved dv/dt capability HRH5N50ADNx.

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Datasheet preview – H5N50ADND

Datasheet Details

Part number H5N50ADND
Manufacturer ChipSourceTek
File Size 1.33 MB
Description 500V N-Channel Planar MOSFET
Datasheet download datasheet H5N50ADND Datasheet
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Full PDF Text Transcription

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500V N-Channel Planar MOSFET HRH5N50ADNx Description TO-252 TO-220F 500V N-Channel Planar MOSFET HRH5N50ADNx is HRM high voltage MOSFET family based on advanced planar stripe DMOS technology. This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency switch mode power supplies. TO-220 HRH5N50ADNx Features  RDSON≤1.5Ω @Vgs=10V, Id=2.5A k Ultra Low gate Charge(typical 16.5nC)  Low Crss (typical 7.
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