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CMT08N50 - Power MOSFET

General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

Key Features

  • ‹ Robust High Voltage Termination ‹ Avalanche Energy Specified ‹ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ‹ Diode is Characterized for Use in Bridge Circuits ‹ IDSS and VDS(on) Specified at Elevated Temperature SYMBOL D GATE DRAIN SOURCE G 12 3 S N-Channel MOSFET.

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Datasheet Details

Part number CMT08N50
Manufacturer Champion
File Size 214.66 KB
Description Power MOSFET
Datasheet download datasheet CMT08N50 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.