2N2222A Datasheet | Central Semiconductor

DESCRIPTION : The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC 75 40 6.0 800 500 1.8 -65 to +200 350 97 UNITS V V V m A m W W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS UNITS ICBO VCB=60V 10 n A ICBO VCB=60V, TA=150°C 10 μA ICEV VCE=60V, VEB=3.0V 10 n A IEBO VEB=3.0V 10 n A BVCBO IC=10μA BVCEO IC=10m A BVEBO IE=10μA VCE(SAT) IC=150m A, IB=15m A 0.3...