MPQ2222A
DESCRIPTION
: The CENTRAL SEMICONDUCTOR MPQ2222, MPQ2222A types are prised of four independent Silicon NPN Transistors mounted in a 14 PIN DIP, designed for general purpose amplifier and switching applications. MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (Each Transistor) Power Dissipation (Total Package) Operating and Storage Junction Temperature Thermal Resistance (Total Package) SYMBOL VCBO VCEO VEBO IC PD PD TJ,Tstg ΘJA UNITS V V V m A m W W °C °C/W
60 40 5.0 500 650 1.9 -65 to +150 66 MPQ2222A MIN MAX 10 100 75 40 6.0 0.3 1.0 1.2 2.0 35 50 75 100 40 200 8.0 30 35 285
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) .MPQ2222 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=50V 50 ICBO VCB=60V IEBO VEB=3.0V 100 BVCBO IC=10µA 60 BVCEO IC=10m A 40 BVEBO IE=10µA 5.0 VCE(SAT) IC=150m A, IB=15m A 0.4 VCE(SAT) IC=300m A, IB=30m A 1.6 VCE(SAT) IC=500m A, IB=50m A VBE(SAT) IC=150m A, IB=15m A 1.3 VBE(SAT)...
