Datasheet4U Logo Datasheet4U.com

CYT5551D - ISOLATED NPN SILICON TRANSISTORS

Description

The CENTRAL SEMICONDUCTOR CYT5551D type consists of two (2) isolated NPN silicon transistors packaged in an epoxy molded SOT-228 surface mount case.

Manufactured by the epitaxial planar process, this SUPERmini™ device is ideal for high voltage amplifier applications.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYT5551D SURFACE MOUNT DUAL, ISOLATED NPN SILICON TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT5551D type consists of two (2) isolated NPN silicon transistors packaged in an epoxy molded SOT-228 surface mount case. Manufactured by the epitaxial planar process, this SUPERmini™ device is ideal for high voltage amplifier applications. MARKING CODE: FULL PART NUMBER SOT-228 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ,Tstg ΘJA -65 to +150 62.5 °C °C/W SYMBOL VCBO VCEO VEBO IC PD 180 160 6.0 600 2.0 UNITS V V V mA W www.DataSheet4U.
Published: |