CXDM1002N - SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

Description

The CENTRAL SEMICONDUCTOR CXDM1002N is a high voltage silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications.

This MOSFET offers high voltage, low rDS(ON), low threshold voltage, and low leakage current.

Features

Low rDS(ON) (140mΩ TYP @ VGS=4.5V).
High voltage (VDS=100V).
Logic level compatibility.
2kV ESD protection.

📥 Download Datasheet

CXDM1002N surface mount n-channel enhancement-mode silicon mosfet by Central Semiconductor - Datasheet Preview

Datasheet Details

Part number	CXDM1002N
Manufacturer	Central Semiconductor
File Size	359.55 KB
Description	SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
Datasheet	CXDM1002N Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
CXD101-106Q	CMOS Digital Delay Line	ETC
CXD104-114Q	C-MOS MEMORY SEQUENCER	ETC
CXD1088AQ	Over Sampling Digital Filter	Sony
CXD1095AR	CMOS I/O Expander	ETC
CXD1095Q	CMOS I/O Port Expander	ETC

Other Datasheets by Central Semiconductor

Part Number	Description
CXDM3069N	SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
CXDM4060P	SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
CXDM6053N	SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

Full PDF Text Transcription

Click to expand full text

CXDM1002N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXDM1002N is a high voltage silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET offers high voltage, low rDS(ON), low threshold voltage, and low leakage current. MARKING: FULL PART NUMBER SOT-89 CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment FEATURES: • Low rDS(ON) (140mΩ TYP @ VGS=4.

Published: Mar 14, 2016 |