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CWDM305PD - Dual P-Channel MOSFET

Description

The CENTRAL SEMICONDUCTOR CWDM305PD is a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications.

Features

  • Low rDS(ON) (83mΩ MAX @ VGS=5.0V).
  • High current (ID=5.3A).

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Full PDF Text Transcription

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CWDM305PD SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305PD is a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low gate charge. SOIC-8 CASE MARKING CODE: C503 APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment FEATURES: • Low rDS(ON) (83mΩ MAX @ VGS=5.0V) • High current (ID=5.
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